ZVN0540ASTZ【PDF 1/1 页】MOSFET N-CHAN 400V TO92-3

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Sheet目录538

[1页]

N-CHANNEL ENHANCEMENT

MODE VERTICAL DMOS FET

ISSUE 2 ? MARCH 94

FEATURES

* 400 Volt V DS

* R DS(on) =50 ?

ZVN0540A

ABSOLUTE MAXIMUM RATINGS.

E-Line

TO92 Compatible

PARAMETER

Drain-Source Voltage

Continuous Drain Current at T amb =25°C

Pulsed Drain Current

Gate-Source Voltage

Power Dissipation at T amb =25°C

Operating and Storage Temperature Range

SYMBOL

V DS

I D

I DM

V GS

P tot

T j :T stg

VALUE

400

600

± 20

700

-55 to +150

UNIT

°C

ELECTRICAL CHARACTERISTICS (at T amb = 25°C unless otherwise stated).

PARAMETER

SYMBOL MIN.

MAX. UNIT CONDITIONS.

Drain-Source Breakdown

Voltage

BV DSS

400

I D =1mA, V GS =0V

Gate-Source Threshold

Voltage

V GS(th)

ID=1mA, V DS = V GS

Gate-Body Leakage

Zero Gate Voltage Drain

Current

On-State Drain Current(1)

Static Drain-Source On-State

Resistance (1)

I GSS

I DSS

I D(on)

R DS(on)

150

400

μ A

V GS = ± 20V, V DS =0V

V DS =400 V, V GS =0

V DS =320 V, V GS =0V,

T=125°C (2)

V DS =25 V, V GS =10V

V GS =10V,I D =100mA

Forward Transconductance(1)(2 g fs

)

100

V DS =25V,I D =100mA

Input Capacitance (2)

C iss

Common Source Output

Capacitance (2)

C oss

V DS =25 V, V GS =0V, f=1MHz

Reverse Transfer Capacitance C rss

(2)

Turn-On Delay Time (2)(3)

t d(on)

Rise Time (2)(3)

Turn-Off Delay Time (2)(3)

Fall Time (2)(3)

t r

t d(off)

t f

V DD ≈ 25V, I D =100mA

3-356

(

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